Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 000754-000758

  Fesquet, L ^a   Olibet, S ^a   Damon Lacoste, J ^a   De Wolf, S ^a   Hessler Wyser, A ^a   Monachon, C ^a   Ballif, C ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI:H); CHEMICAL VAPOR DEPOSITED; CRYSTALLINE SILICON WAFERS; FLAT SUBSTRATES; HETEROJUNCTION SOLAR CELLS; MICRO-ROUGHNESS; SILICON SUBSTRATES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; TEXTURED SILICON WAFERS; TEXTURED SUBSTRATES; TEXTURIZATION;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; MORPHOLOGY; OPEN CIRCUIT VOLTAGE; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOLAR CELLS; SUBSTRATES; SURFACE MORPHOLOGY;

AMORPHOUS SILICON;

EID: 77951590151     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411173     Document Type: Conference Paper

References (13)

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