High indium composition (>20%) InGaN EPI-layers on ZnO substrates for very high efficiency solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001123-001126

  Melton, Andrew ^a   Jampana, Balakrishnam ^b   Li, Nola ^a   Jamil, Muhammad ^a   Zaidi, Tahir ^a   Fenwick, William ^a   Opila, Robert ^b   Honsberg, Christiana ^c   Ferguson, Ian ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE SUBSTRATES; BANDGAP ABSORPTION; BULK SUBSTRATES; EPILAYERS GROWN; FLOW RATIOS; GROWTH PARAMETERS; HIGH-EFFICIENCY SOLAR CELLS; HRXRD; III-NITRIDES; INDIUM CONTENT; LATTICE MATCH; LIMITING FACTORS; LOW COSTS; MOCVD; MOCVD GROWTH; OPTICAL TRANSMISSIONS; PERFECTLY MATCHED; ZNO; ZNO SUBSTRATE;

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; EPITAXIAL FILMS; FILM GROWTH; GALLIUM NITRIDE; INDIUM; LIGHT TRANSMISSION; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS; ZINC OXIDE;

SUBSTRATES;

EID: 77951565307     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411216     Document Type: Conference Paper

References (9)

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