Response time of silicon photodiodes for DUV/EUV radiation

Conference Record - IEEE Instrumentation and Measurement Technology Conference

Volumn , Issue , 2008, Pages 1956-1959

  Xia, Sha ^a   Sarubi, Francesco ^a   Naulaerts, Rik ^b   Nihtianov, Stoyan ^a,b   Nanver, Lis ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ASML   (Netherlands)

Author keywords

Deep ultraviolet extreme ultraviolet; Radiation detector; Response time; Series resistance

Indexed keywords

BIOMECHANICS; COMPUTER NETWORKS; ELECTROMAGNETIC WAVES; INSTRUMENTS; MEASUREMENT THEORY; PHOTODIODES; RESPIRATORY MECHANICS; SILICON;

DEEP ULTRAVIOLET/EXTREME ULTRAVIOLET; RADIATION DETECTOR; RESPONSE TIME; SERIES RESISTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 51349166763     PISSN: 10915281     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMTC.2008.4547368     Document Type: Conference Paper

References (5)

1. US Patent application P-2815.000-US, "" Detector for 193nm radiation", filed on 25 June 2007.
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3. G. K. Reeves, "Specific contact resistance using a circular transmission line model," Solid-State Electron., vol. 23, no. 5, pp. 487-490, May 1980.
4. N. C. Wyeth "Sheet resistance component of series resistance in a solar cell as a function of grid geomentry," Solid-State Electron., vol. 20, no. 7, pp. 629-634, July 1977.
5. Taurus MEDICITM version W-2004.09 User Guide, Synopsys, Inc..