Lifetime and performance of InGaAsP and InGaAs absorbers for low bandgap tandem solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001090-001093

  Sagol B E ^a   Szabo N ^a   Doscher H ^a   Seidel, U ^a   Hohn C ^a   Schwarzburg, K ^a   Hannappel, T ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER MATERIAL; GAAS; HIGH BANDGAP; INGAAS ABSORBER; INGAASP; INP; LOW BANDGAP; TANDEM SOLAR CELLS; TIME-RESOLVED PHOTOLUMINESCENCE;

ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SOLAR CELLS;

SOLAR ABSORBERS;

EID: 77951554397     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411209     Document Type: Conference Paper

References (16)

1. R.R. King et al., "40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells", Appl. Phys. Lett. 90, 2007, 183516.
2. ISE Fraunhofer Press Release 01/09, "World Record: 41.1% efficiency reached for multi-junction solar cells at Fraunhofer ISE", 14.01.2009.
3. J.F. Geisz et al., "40.8% efficient triple-junction solar cell with two independently metamorphic junctions", Appl. Phys. Lett. 93, 2009, 123505.
4. th IEEE PV Spec. Conf., 1997, pp. 875-878.
5. th IEEE PV Spec. Conf., 1997, pp. 895-898.
6. th EU PVSEC, 2001, pp. 178-181.
7. Y. Gu et al., "High-efficiency InP based multi-junction solar cells", Proc. SPIE - The Intern.Society for Opt. Eng., 2003, vol.5260, no.1, pp. 110-113
8. th World Conf. on Photovoltaic Energy Conversion, 2006, vol. 1, pp. 598-602.
9. nd European PV Solar Energy Conf., 2007, pp. 524-527.
10. nd European PV Solar Energy Conf., 2007, pp. 704-707.
11. U. Seidel et al., "Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell", J. Crys. Growth 298, 2007, pp. 777-781.
12. U. Seidel et al., "InGaAs/GaAsSb-interface studies in a tunnel junction of a low band gap tandem solar cell", Thin Sol. Films 516, 2008, pp. 6723-6728.
13. nd European PV Solar Energy Conf., 2007, pp. 106-110.
14. P. Tronc et al., "Time-resolved photoluminescence study of GaInAs/AIGaInAs superlattices", Superlattices and Microstructures 24, 1998, pp. 347-352. (Pubitemid 128398332)
15. 0.47As", Appl. Phys. Lett. 70, pp. 756-758.
16. st IEEE PV Spec. Conference, 2005, pp. 675-678.