Time-resolved photoluminescence study of GaInAs/AlGaInAs superlattices

Superlattices and Microstructures

Volumn 24, Issue 5, 1998, Pages 347-352

  Tronc, P ^a   Wang, G ^a   Reid, B ^b   Maciejko, R ^b   Harmand, J C ^c   Palmier, J F ^c   Sermage, B ^c   Roussignol, P ^d  

^a INSTITUT LANGEVIN   (France)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^c ORANGE LABS   (France)

^d ECOLE NORMALE SUPÉRIEURE   (France)

Author keywords

Exciton; Superlattice; Time resolved photoluminescence

Indexed keywords

BINDING ENERGY; EXCITONS; LASER PULSES; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

ALUMINUM GALLIUM INDIUM ARSENIDE; ELECTRON-TO-LIGHT-HOLE TRANSITION; GALLIUM INDIUM ARSENIDE; POWDER-IN-TUBE DIODES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032287741     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1998.0591     Document Type: Article

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