InGaAs/GaAsSb-interface studies in a tunnel junction of a low band gap tandem solar cell

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6723-6728

  Seidel, U ^a   Sagol B E ^a   Szabo N ^a   Schwarzburg, K ^a   Hannappel, T ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

III V solar cells; InP based materials; Low energy electron diffraction; Metal organic chemical vapor deposition; Metal organic vapor phase epitaxy; Reflectance anisotropy spectroscopy; Surface reconstruction

Indexed keywords

DIRECT ENERGY CONVERSION; GALLIUM ALLOYS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; TUNNEL JUNCTIONS;

BAND GAPS; INGAP-GAAS; TANDEM SOLAR CELLS;

ENERGY GAP;

EID: 45849103552     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.013     Document Type: Article

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