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Volumn 104, Issue 16, 2010, Pages

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

(15) Pentcheva, R a Huijben, M b Otte, K a Pickett, W E c Kleibeuker, J E b Huijben, J b Boschker, H b Kockmann, D b Siemons, W d Koster, G b Zandvliet, H J W b Rijnders, G b Blank, D H A b Hilgenkamp, H b Brinkman, A b

a UNIVERSITY OF MUNICH (Germany)

b UNIVERSITY OF TWENTE (Netherlands)

c UNIVERSITY OF CALIFORNIA (United States)

d UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; ELECTRON-HOLE BILAYERS; ELECTRONIC INTERFACE; EXPERIMENTAL EVIDENCE; FIRST-PRINCIPLES CALCULATION; HOLE CARRIERS; LAALO3 FILMS; MAGNETOTRANSPORTS; MODEL SYSTEM; POLAR OXIDES; TRANSPORT MEASUREMENTS;

OXIDE MINERALS; PEROVSKITE; REPAIR; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

SURFACE RECONSTRUCTION;

EID: 77951263405 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.104.166804 Document Type: Article

Times cited : (111)

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