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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1746-1749

Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN

(6) Saida, J a Kim, E H a Hikosaka, T a Honda, Y a Yamaguchi, M a Sawaki, N a

a NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY CURVES; ENERGY RELAXATION; ENERGY RELAXATION PROCESS; EXCESS CARRIERS; EXCITATION SOURCES; EXPONENTIAL DECAYS; FAST PROCESS; FEMTOSECOND PULSE; GAN EPITAXIAL LAYERS; IMPURITY BANDS; MG-DOPED; PHOTOGENERATED CARRIERS; PHOTOLUMINESCENCE INTENSITIES; ROOM TEMPERATURE; TIME CONSTANTS;

ELECTRON MOBILITY; GALLIUM ALLOYS; LASER EXCITATION; PULSED LASER APPLICATIONS; RELAXATION PROCESSES;

GALLIUM NITRIDE;

EID: 77951221148 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778620 Document Type: Conference Paper

Times cited : (3)

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