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Volumn 45, Issue 4, 2010, Pages 471-475

Measurement of arsenic and gallium content of gallium arsenide semiconductor waste streams by ICP-MS

Author keywords

Environmental issues; Gallium arsenide; ICP MS; Lapping waste; Polishing waste; Semiconductor; Sustainability

Indexed keywords

ARSENIC CONTENT; ARSENIC LEVELS; ENVIRONMENTAL ISSUES; GAAS; HAZARDOUS WASTES; ICP-MS; INDUSTRIAL SOURCES; LABORATORY CONDITIONS; LIQUID WASTES; MANUFACTURING PROCESS; PROCESSING WASTES; SEMI-CONDUCTOR WAFER; SEMICONDUCTOR DEVICE FABRICATION; SOLIDS CONTENT; SUSTAINABLE MANUFACTURING; WAFER POLISHING; WAFER PROCESSING; WAFER-THINNING PROCESS; WASTE SLURRIES; WASTE STREAM;

EID: 77951210960     PISSN: 10934529     EISSN: 15324117     Source Type: Journal    
DOI: 10.1080/10934520903540133     Document Type: Article
Times cited : (21)

References (23)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.