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Volumn 96, Issue 14, 2010, Pages

Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure

Author keywords

[No Author keywords available]

Indexed keywords

AHARONOV-BOHM EFFECTS; CHANNEL WIDTHS; DENSITY OF STATE; GATE VOLTAGES; LANDAU LEVELS; MAGNETOCONDUCTANCE; NANO-RING STRUCTURES; PHASE-COHERENCE LENGTH; POOR VISIBILITY; SHUBNIKOV-DE HAAS;

EID: 77951191358     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3380616     Document Type: Article
Times cited : (23)

References (28)
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    • The same hysteresis in resistance minima as in Fig. was observed under high magnetic field too. Since the condition for resistance minima at fixed magnetic field is given as n= (e/h) B and the carrier density is proportional to the gate voltage as n=α Vg, the observed hysteresis in the resistance minima by sweeping the gate voltage at a fixed magnetic field confirms that it is originated by the trapped charge carriers which effectively reduces the carrier density in the GNS as Eq. in the text.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.