Real-time evolution of the indium tin oxide film properties and structure during annealing in vacuum

Applied Physics Letters

Volumn 85, Issue 2, 2004, Pages 212-214

  Rogozin, A ^a   Shevchenko, N ^a   Vinnichenko, M ^a,b   Prokert, F ^a   Cantelli, V ^a   Kolitsch, A ^a   Moller W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRONS; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS STATE; CRYSTALLINE FRACTION; DONOR ACTIVATION; FILM RESISTIVITY;

SEMICONDUCTING FILMS;

EID: 3242883902     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771456     Document Type: Article

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