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Volumn , Issue , 2009, Pages

An overview of semiconductor technologies and circuits for terahertz communication applications

Author keywords

Broadband communication; High speed integrated circuits; Semiconductor devices

Indexed keywords

BROADBAND COMMUNICATION; BROADBAND WIRELESS COMMUNICATIONS; CURRENT STATUS; HIGH-SPEED INTEGRATED CIRCUITS; MOSFETS; SEMICONDUCTOR TECHNOLOGY; SIGE HBTS; TERAHERTZ APPLICATIONS; TERAHERTZ COMMUNICATION; TERAHERTZ COMMUNICATION SYSTEMS;

EID: 77951156017     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GLOCOMW.2009.5360683     Document Type: Conference Paper
Times cited : (9)

References (16)
  • 5
    • 23044442756 scopus 로고    scopus 로고
    • Schottky barrier diodes for millimeter wave detection in a foundry CMOS process
    • DOI 10.1109/LED.2005.851127
    • S. Sankaran and K. K. O, "Schottky barrier diodes for millimeter wave detection in a foundry CMOS process," IEEE Electron Device Letters, vol. 26, no. 7, pp. 492-494, 2005. (Pubitemid 41055312)
    • (2005) IEEE Electron Device Letters , vol.26 , Issue.7 , pp. 492-494
    • Sankaran, S.1    Kenneth, K.O.2
  • 7
    • 48649099805 scopus 로고    scopus 로고
    • 30-nm InAs Pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz
    • D.-H. Kim and J. A. del Alamo, "30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz," IEEE Electron Device Letters, vol. 29, no. 8, pp. 830-833, 2008.
    • (2008) IEEE Electron Device Letters , vol.29 , Issue.8 , pp. 830-833
    • Kim, D.-H.1    Alamo, J.A.D.2
  • 16
    • 49249095390 scopus 로고    scopus 로고
    • A 210 GHz dual-gate FET Mixer MMIC With > 2 dB conversion gain, high LO-to-RF isolation, and low LO-drive requirements
    • I. Kallfass, H. Massler, A. Leuther, A. Tessmann, and M. Schlechtweg, "A 210 GHz Dual-Gate FET Mixer MMIC With > 2 dB Conversion Gain, High LO-to-RF Isolation, and Low LO-Drive Requirements," IEEE Microwave and Wireless ssComponents Letters, vol. 18, no. 8, pp. 557-559, 2008.
    • (2008) IEEE Microwave and Wireless SsComponents Letters , vol.18 , Issue.8 , pp. 557-559
    • Kallfass, I.1    Massler, H.2    Leuther, A.3    Tessmann, A.4    Schlechtweg, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.