Real-time ellipsometric study of Ge+ ion implanted SiO 2 layers during fast annealing

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 5, 2008, Pages 1287-1289

  Shvets, V A ^a   Tyschenko, I E ^a   Chikichev, S I ^a   Prokopiev, V Yu ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CLUSTERS; ELLIPSOMETRIC MEASUREMENTS; ELLIPSOMETRIC PARAMETERS; GE ATOM; HIGH-TEMPERATURE ANNEALING; IMPLANTED LAYERS; IN-SITU; ION IMPLANTED; LOW TEMPERATURES; RAPID CHANGES; SAMPLE SURFACE; TEMPERATURE INTERVALS; TEMPERATURE RISING; WATER EVAPORATION;

AGGLOMERATION; ION IMPLANTATION; SILICON COMPOUNDS; SILICON OXIDES; SPECTROSCOPIC ELLIPSOMETRY;

GERMANIUM;

EID: 77951114409     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200777815     Document Type: Conference Paper

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