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IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2009, Pages 4-6

A monolithic integration of Ge photodiodes with Si variable optical attenuators

(9) Park, Sungbong a Tsuchizawa, Tai a Watanabe, Toshifumi a Shinojima, Hiroyuki a Nishi, Hidetaka a Yamada, Koji a Ishikawa, Yasuhiko b Wada, Kazumi b Itabashi, Seiichi a

a NTT CORPORATION (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC INTEGRATION; PIN PHOTODIODE; RESPONSIVITY; SI PHOTONICS; VARIABLE OPTICAL ATTENUATORS;

ELECTRIC ATTENUATORS; GERMANIUM; MONOLITHIC INTEGRATED CIRCUITS; PHOTODIODES; SEMICONDUCTOR DIODES; SILICON;

ELECTROMAGNETIC WAVE ATTENUATION;

EID: 77951080144 PISSN: 19492081 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/GROUP4.2009.5338310 Document Type: Conference Paper

Times cited : (5)

References (8)

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