Complementary metal oxide semiconductor compatible fabrication and characterization of parylene-C covered nanofluidic channels with integrated nanoelectrodes

Biomicrofluidics

Volumn 3, Issue 3, 2009, Pages

  Tung, Chih kuan ^a   Riehn, Robert ^b   Austin, Robert H ^a,c  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77951000462     PISSN: 19321058     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3212074     Document Type: Article

References (22)

1. Lupski J.R. Nat. Genet. 2007, 39:S43. NGENEC, 1061-4036, 10.1038/ng2084.
2. Heinzen E.L. Ge D. Cronin K.D. Maia J.M. Shianna K.V. Gabriel W.N. Welsh-Bohmer K.A. Hulette C.M. Denny T.N. Goldstein D.B. PLoS Biol. 2008, 6:e1000001. PBLIBG, 1545-7885, 10.1371/journal.pbio.1000001.
3. Wang Y.M. Tegenfeldt J.O. Reisner W. Riehn R. Guan X.-.J. Guo L. Golding I. Cox E.C. Sturm J. Austin R.H. Riehn R. Lu M. Wang Y.M. Lim S.F. Cox E.C. Austin R.H. Proc. Natl. Acad. Sci. U.S.A. 2005, 102:10012. PNASA6, 0027-8424, 10.1073/pnas.0502917102, PNASA6, 0027-8424, 10.1073/pnas.0503809102.
4. Tegenfeldt J.O. Prinz C. Cao H. Chou S. Reisner W.W. Riehn R. Wang Y.M. Cox E.C. Sturm J.C. Silberzan P. Austin R.H. Reisner W. Morton K.J. Riehn R. Wang Y.M. Yu Z. Rosen M. Sturm J.C. Chou Y. Frey E. Austin R.H. Phys. Rev. Lett. 2005, 94:196101. PNASA6, 0027-8424, 10.1073/pnas.0403849101, PRLTAO, 0031-9007, 10.1103/PhysRevLett.94.196101.
5. Mannion J.T. Reccius C.H. Cross J.D. Craighead H.G. Biophys. J. 2006, 90:4538. BIOJAU, 0006-3495, 10.1529/biophysj.105.074732.
6. Kasianowicz J.J. Brandin E. Branton D. Deamer D.W. Austin R. Nature Mater. 2003, 2:567. PNASA6, 0027-8424, 10.1073/pnas.93.24.13770, NMAACR, 1476-1122, 10.1038/nmat962.
7. Liang X.G. Chou S.Y. Nano Lett. 2008, 8:1472. NALEFD, 1530-6984, 10.1021/nl080473k.
8. Triroj N. Lapierre-Devlin M.A. Kelley S.O. Beresford R. IEEE Sens. J. 2006, 6:1395. ISJEAZ, 1530-437X, 10.1109/JSEN.2006.884444.
9. Webster J.R. Burns M.A. Burke D.T. Mastrangelo C.H. Anal. Chem. 2001, 73:16221. ANCHAM, 0003-2700, 10.1021/ac0004512.
10. Mao P. Han J.Y. Lab Chip 2005, 5:837. LCAHAM, 1473-0197, 10.1039/b502809d.
11. Li W.L. Tegenfeldt J.O. Chen L. Austin R.H. Chou S.Y. Kohl P.A. Krotine J. Sturm J.C. Peng C. Pang S.W. J. Vac. Sci. Technol. B 2006, 24:1941. NNOTER, 0957-4484, 10.1088/0957-4484/14/6/302, JVTBD9, 1071-1023, 10.1116/1.2221319.
12. Cao H. Yu Z. Wang J. Tegenfeldt J.O. Austin R.H. Chen E. Wu W. Chou S.Y. Appl. Phys. Lett. 2002, 81:174. APPLAB, 0003-6951, 10.1063/1.1489102.
13. Létant S.E. van Buuren T.W. Terminello L.J. Nano Lett. 2004, 4:1705. NALEFD, 1530-6984, 10.1021/nl049111c.
14. Turner S.W. Perez A.M. Lopez A. Craighead H.G. J. Vac. Sci. Technol. B 1998, 16:3835. JVTBD9, 1071-1023, 10.1116/1.590419.
15. Yira J.H. Beach W.F. 1992, and, U.S. Patent No. 5139813 (August ).
16. Beach W.F. Austin T.M. Humphrey B.J. 1991, and, European Patent Application No. 0 449 291 A2 (October ).
17. Park S.-.M. Yoo J.-.S. Anal. Chem. 2003, 75:455A. ANCHAM, 0003-2700.
18. Rodgers P.J. Amemiya S. Anal. Chem. 2007, 79:9276. ANCHAM, 0003-2700, 10.1021/ac0711642.
19. Sistat P. Kozmai A. Pismenskaya N. Larchet C. Pourcelly G. Nikonenko V. Electrochim. Acta 2008, 53:6380. ELCAAV, 0013-4686, 10.1016/j.electacta.2008.04.041.
20. Bard A.J. Faulkner L.R. Electrochemical Methods: Fundamentals and Applications 2001, 2nd ed. (Wiley, New York, ).
21. Silicon Nitride and Silicon Dioxide Thin Insulating Films 2001, 2001-7. A. R. Landgrebe, K. B. Sundaram, Electrochemical Society Proceedings,, edited by and (unpublished).
22. Stein D. Kruithof M. Dekker C. Schoch R.B. van Lintel H. Renaud P. Phys. Fluids 2005, 17:100604. PRLTAO, 0031-9007, 10.1103/PhysRevLett.93.035901, PHFLE6, 1070-6631, 10.1063/1.1896936.