InGaN-GaN disk laser for blue-violet emission wavelengths

IEEE Photonics Technology Letters

Volumn 22, Issue 9, 2010, Pages 652-654

  Debusmann, R ^a   Dhidah, N ^b   Hoffmann, V ^c   Weixelbaum, L ^c   Brauch, U ^b   Graf, T ^b   Weyers, M ^c   Kneissl, M ^a,c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Gallium compounds; Indium compounds; Nitrogen compounds; Optical pumping; Quantum well (QW) lasers; Semiconductor lasers

Indexed keywords

CRITICAL PARAMETER; DISK LASERS; EXTERNAL CAVITY; OPTICALLY PUMPED; PEAK OUTPUT POWER; QUANTUM WELL; QUANTUM-WELL (QW) LASERS; SLOPE EFFICIENCIES; THRESHOLD PUMP POWER; VIOLET EMISSION;

GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM COMPOUNDS; LASERS; NITROGEN COMPOUNDS; OPTICALLY PUMPED LASERS; PUMPS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL PUMPING;

EID: 77950975731     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2043668     Document Type: Article

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