Quantitative electroluminescence analysis of resistive losses in Cu(In, Ga)Se2 thin-film modules

Solar Energy Materials and Solar Cells

Volumn 94, Issue 6, 2010, Pages 979-984

  Helbig, Anke ^a   Kirchartz, Thomas ^b   Schaeffler, Raymund ^c   Werner, Jürgen H ^a   Rau, Uwe ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c Würth Elektronik Research GmbH   (Germany)

Author keywords

Cu(In,Ga)Se2; Luminescence; Reciprocity; Thin film solar cells

Indexed keywords

BACK CONTACT; CU(IN , GA)SE; CU(IN,GA)SE2; ELECTROLUMINESCENCE IMAGING; ELECTROLUMINESCENCE INTENSITY; INDIVIDUAL CELLS; RESISTIVE LOSS; SPATIAL DEPENDENCE; SPECIFIC LOCATION; SURFACE POSITIONS; TEST MODULES; THIN-FILM SOLAR CELLS; VOLTAGE DROP; WINDOW LAYER; ZNO;

ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; GALLIUM; SOLAR CELLS; ZINC OXIDE;

LIGHT;

EID: 77950936596     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.01.028     Document Type: Article

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