Modelling c-Si/SiNx interface recombination by surface damage

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 3-4, 2010, Pages 91-93

  Steingrube, Silke ^a   Altermatt, Pietro P ^b   Schmidt, Jan ^a   Brendel, Rolf ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Modeling; Photoconduction; Silicon; Solar cells

Indexed keywords

ACCEPTOR DENSITY; CELL FABRICATIONS; DENSITY OF DEFECTS; ELECTRONIC PASSIVATION; EXCESS CARRIERS; H-TERMINATION; HIGH TEMPERATURE PROCESS; INTERFACE RECOMBINATION; MODELING; PHOTOCONDUCTION; POOR PERFORMANCE; QUANTITATIVE ANALYSIS; RECOMBINATION VELOCITY; SI SOLAR CELLS; SOLAR CELL PROCESSING; SURFACE DAMAGES; WAFER PRETREATMENT;

DEFECT DENSITY; DEFECTS; PASSIVATION; SILICON NITRIDE; SILICON WAFERS; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 77950884736     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004023     Document Type: Article

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