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Volumn 22, Issue 17, 2010, Pages
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Electronic structure of Bi lines on clean and H-passivated Si(100)
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Author keywords
[No Author keywords available]
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Indexed keywords
AB INITIO;
ATOMIC WIRES;
BI NANOLINES;
LOCAL DENSITY OF STATE;
LOW BIAS;
NANOLINES;
PASSIVATED SURFACE;
SCANNING TUNNELLING MICROSCOPY AND SPECTROSCOPY;
SI SURFACES;
SI(1 0 0);
SI(100) SURFACE;
ELECTRONIC PROPERTIES;
ELECTRONIC STRUCTURE;
SCANNING TUNNELING MICROSCOPY;
SILICON;
PASSIVATION;
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EID: 77950843178
PISSN: 09538984
EISSN: 1361648X
Source Type: Journal
DOI: 10.1088/0953-8984/22/17/175006 Document Type: Article |
Times cited : (7)
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References (13)
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