Bi nanoline passivity to attack by radical hydrogen or oxygen

Surface Science

Volumn 499, Issue 1, 2002, Pages

  Owen, J H G ^a   Bowler, D R ^b   Miki, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Bismuth; Hydrogen atom; Oxidation; Ozone; Scanning tunneling microscopy; Semiconducting surfaces; Silicon

Indexed keywords

BISMUTH; DIMERS; HYDROGEN; OXIDATION; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE REACTIONS;

SEMICONDUCTING SURFACES;

NANOSTRUCTURED MATERIALS;

EID: 0037138502     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01912-4     Document Type: Article

References (10)