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Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 2004, Pages

Implementation of 60V tolerant dual direction ESD protection in 5V BiCMOS process for automotive application

(4) Vashchenko, V A a Kindt, W a Beek, M Ter a Hopper, P a

a NATIONAL SEMICONDUCTOR CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE APPLICATIONS; BI-CMOS PROCESS; BREAKDOWN VOLTAGE; ESD PROTECTION; EXPERIMENTAL MEASUREMENTS; NOVEL METHODS; NUMERICAL SIMULATION; ON-CHIP PROTECTION; THIN FILM RESISTORS;

COMPUTER SIMULATION; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE;

THIN FILM CIRCUITS;

EID: 77950805135 PISSN: 07395159 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/EOSESD.2004.5272623 Document Type: Conference Paper

Times cited : (14)

References (8)

1
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- (1995) Proceedings of the IRPS , pp. 337-340
- Chen, J.Z.¹ Amerasekera, A.² Vrotsos, T.³

2
- 84932097188
- Bipolar SCR ESD protection in a 0.25 μm Si-Ge process using sub-collector region modification
- V.A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "Bipolar SCR ESD Protection in a 0.25 μm Si-Ge Process Using Sub-Collector Region Modification" Proceedings of the IRPS, 2004, pp.469-473
- (2004) Proceedings of the BCTM , pp. 469-473
- Vashchenko, V.A.¹ Concannon, A.² Ter Beek, M.³ Hopper, P.⁴

3
- 0036437982
- Comparison of ESD protection capability of lateral BJT, SCR and bi-directional SCR for hi-voltage BiCMOS circuits
- V. A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "Comparison of ESD Protection Capability of lateral BJT, SCR and bi-directional SCR for Hi-Voltage BiCMOS Circuits", in Proceedings of the BCTM, 2002, pp.181-184. (Pubitemid 35406540)
- (2002) Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting , pp. 181-184
- Vashchenko, V.¹ Concannon, A.² Ter Beck, M.³ Hopper, P.⁴

4
- 77950787976
- Wiley
- S.M. Sze, Physics of semiconductor devices, Wiley, p.229.
- IEEE BCTM 3.1 , pp. 229
- Sze, S.M.¹

5
- 0033280508
- A compact square-cell ESD structure for BiCMOS IC
- A. Z. Wang and C. H. Tsay, "A compact Square-Cell ESD Structure for BiCMOS IC", IEEE BCTM 3.1, 1999, p.46
- (1999) Proceed. of BCTM , pp. 46
- Wang, A.Z.¹ Tsay, C.H.²

6
- 1042300821
- Multi-port ESD protection using bi-directional SCR structures
- V. A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper, "Multi-Port ESD Protection Using Bi-Directional SCR Structures", in Proceed. of BCTM, 2003, pp.137-140.
- (2003) Proceedings of the ISPSD , pp. 137-140
- Vashchenko, V.A.¹ Concannon, A.² Ter Beek, M.³ Hopper, P.⁴

7
- 77950842980
- "TSUPREME4", "MEDICI", Versions 2002.4.0. Reference Manual, Synopsys, 2002
- "TSUPREME4", "MEDICI", Versions 2002.4.0. Reference Manual, Synopsys, 2002

8
- 4944258343
- Stacked BSCR ESD protection for 250V tolerant circuit
- May 25, in print, paper#114
- V.A. Vashchenko, A. Concannon, M. ter Beek, and P. Hopper "Stacked BSCR ESD Protection for 250V tolerant circuit" Proceedings of the ISPSD, 2004, May25, in print, paper#114.
- (2004) Invited Talk, Proc. of the International Solid State Circuits Conference
- Vashchenko, V.A.¹ Concannon, A.² Ter Beek, M.³ Hopper, P.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.