White light luminescence from annealed thin ZnO deposited porous silicon

Journal of Luminescence

Volumn 130, Issue 7, 2010, Pages 1295-1299

  Kayahan, Ersin ^a  

^a KOCAELI UNIVERSITY   (Turkey)

Author keywords

Electrochemical etching; Porous silicon; RF sputtering; White luminescence; ZnO thin film

Indexed keywords

BLUE SHIFT; BONDING MODEL; BROADBAND LUMINESCENCE; NATIVE DEFECT; PHOTOLUMINESCENCE PROPERTIES; POROUS SILICON SURFACES; RF-SPUTTERING; SI-H BONDS; SI-O-SI BOND; UNDERLYING MECHANISM; VISIBLE SPECTRA; WHITE LIGHT; WHITE LUMINESCENCE; ZNO; ZNO THIN FILM;

ELECTROCHEMICAL ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; LIGHT; LUMINESCENCE; METALLIC FILMS; OPTICAL FILMS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; ZINC OXIDE;

POROUS SILICON;

EID: 77950691338     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2010.02.042     Document Type: Article

References (31)

1. Prabakaran R., Peres M., Monteiro T., Fortunato E., Martins R., and Ferreira I. J. Non-Cryst. Solids 354 (2008) 2181
2. Seo S.-Y., Cho K.-S., and Shin J.H. Appl. Phys. Lett. 84 5 (2004) 717
3. Mahmoudi Be., Gabouzea N., Guerbous L., Haddadi M., and Beldjilali K. J. Lumin. 127 (2007) 534
4. Hu G., Li S.Q., Gong H., Zhao Y., Zhang J., Wijesinghe T.L.S.L., and Blackwood D.J. J. Phys. Chem. C 113 (2009) 751
5. Proot J.P., Delerue C., and Allan G. Appl. Phys. Lett. 61 (1992) 1948
6. Wang L.W., and Zunger A. J. Phys. Chem. 98 (1994) 2158
7. Wijesinghe T.L.S.L., Teo E.J., and Blackwood D.J. Electrochim. Acta 53 (2008) 4381
8. Wolkin M.V., Jorne J., Fauchet P.M., Allan G., and Delerue C. Phys. Rev. Lett. 82 (1999) 197
9. Hou X.Y., Shi G., Wang W., Zhang F.L., Hao P.H., Huang D.M., and Wang X. Appl. Phys. Lett. 62 10 (1993) 1097
10. Galstyan V.E., Martirosyan Kh.S., Aroutiounian V.M., Arakelyan V.M., Arakelyan A.H., and Soukiassian P.G. Thin Solid Films 517 (2008) 239
11. Dimova-Malinovska D. J. Lumin. 80 (1999) 207
12. Min Y., Tuller H.L., Palzer S., Wollenstein J., and Bottner H. Sensors Actuators B 93 (2003) 435
13. Kim C., Park A., Prabakar K., and Lee C. Mater. Res. Bull. 41 (2006) 253
14. J.C. Vial, J. Derrien, Editors, Porous Silicon Science and Technology (winter school, Les Houches), Springer-Verlag, Paris, 1995.
15. Singh R.G., Singh F., Agarwal V., and Mehra R.M. J. Phys. D: Appl. Phys. 40 (2007) 3090
16. Oral A.Y., Bahsi Z.B., and Aslan M.H. Appl. Surf. Sci. 253 (2007) 4593
17. Harraz F.A., Sakka T., and Ogata Y.H. Phys. Status Solidi (a) 197 1 (2003) 51
18. Rahmani M., Moadhen A., Zaibi M.-A., Elhouichet H., and Oueslati M. J. Lumin. 128 (2008) 1763
19. Arnoldbik W.M., Habraken F.H.P.M., and Instr. Nucl. Methods Phys. Res. B 256 (2007) 300
20. Kanemitsu Y., and Okamoto S. Phys. Rev. B 56 4 (1997) R1696
21. Maruyama T., and Ohtani S. Appl. Phys. Lett. 65 11 (1994) 1346
22. Kanemitsu Y., Futagi T., Matsumoto T., and Mimura H. Phys. Rev. B 49 20 (1994) 14732
23. Parler C.M., Ritter J.A., and Amiridis M.D. J. Non-Cryst. Solids 279 (2001) 119
24. Hamadache F., Renaux C., Duvail J.-L., and Bertrand P. Phys. Status Solidi (a) 197 1 (2003) 168
25. Ryu Y.R., Zhu S., Budai J.D., Chandrasekhar H.R., Micely P.F., and White H.W. Appl. Phys. Lett. 88 (2000) 210
26. Özgür Ü., Alivov Y.I., Liu C., Teke A., Reshchikov M.A., Doǧan S., Avrutin V., Cho S.J., and Morkoç H. J. Appl. Phys. 98 (2005) 041301
27. Khomchenko V.S., Kryshtab T.G., Savin A.K., Zavyalova L.V., Roshchina N.N., Rodionov V.E., Lytvyn O.S., Kushnirenko V.I., Khachatryan V.B., and Andraca-Adame J.A. Superlatt. Microstruct. 42 (2007) 94
28. Lu H.-Y., Chu S.-Y., and Tan S.-S. J. Cryst. Growth 269 (2004) 385
29. Cheng H.-M., Hsu H.-C., Chen S.-L., Wu W.-T., Kao C.-C., Lin L.-J., and Hsieh W.-F. J. Cryst. Growth 277 1-4 (2005) 192
30. Kanemitsu Y., Ogawa T., Shiraishi T., and Tageda K. Phys. Rev. B 48 7 (1993) 4883
31. Lim J., Shin K., Kim H.W., and Lee C. Mater. Sci. Eng. B 107 (2004) 301