Electronic transport behavior of diameter-graded Ag nanowires

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 374, Issue 22, 2010, Pages 2267-2269

  Wang, Xue Wei ^a,b   Yuan, Zhi Hao ^a  

^a TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

^b Tianjin Key Lab for Photoelectric Materials and Devices   (China)

Author keywords

Diameter graded nanowires; Electronic transport; Metal semiconductor junction

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANODIC OXIDATION; NANOWIRES;

ANODIC ALUMINUM OXIDE MEMBRANES; AXIAL DIRECTION; DIRECT-CURRENT ELECTRODEPOSITION; ELECTRONIC TRANSPORT; ELECTRONIC TRANSPORT MEASUREMENTS; METAL-SEMICONDUCTOR JUNCTIONS; PORE DIAMETERS; TRANSPORT BEHAVIOR;

SEMICONDUCTOR JUNCTIONS;

EID: 77950594771     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2010.03.044     Document Type: Article

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