Fabrication and anomalous transport properties of an Sb/Bi segment nanowire nanojunction array

Nanotechnology

Volumn 16, Issue 10, 2005, Pages 2096-2099

  Zhang, Y ^a   Li, L ^a   Li, G H ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; BISMUTH COMPOUNDS; ELECTRIC RESISTANCE; ELECTRODEPOSITION; FIELD EFFECT TRANSISTORS; MAGNETIC FIELDS; NANOTECHNOLOGY; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES;

ELECTRIC TRANSPORT PROPERTIES; PULSED ELECTRODEPOSITION; RESISTANCE MEASUREMENTS; SWITCHING BEHAVIOR;

ANTIMONY COMPOUNDS;

EID: 25444473402     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/10/020     Document Type: Article

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