Growth of ZnSe thin layers on different substrates and their structural consequences with bath temperature

Physica B: Condensed Matter

Volumn 405, Issue 10, 2010, Pages 2485-2491

  Moses Ezhil Raj, A ^a   Mary Delphine, S ^b   Sanjeeviraja, C ^c   Jayachandran, M ^d  

^a SCOTT CHRISTIAN COLLEGE AUTONOMOUS   (India)

^b Holy Cross College   (India)

^c ALAGAPPA UNIVERSITY   (India)

^d CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

Author keywords

A. Thin films; B. Chemical synthesis; C. X ray diffraction; D. Crystal structure

Indexed keywords

AL SUBSTRATE; AQUATIC SOLUTIONS; BATH TEMPERATURES; C. X-RAY DIFFRACTION; CATHODIC ELECTRODEPOSITION; CHEMICAL SYNTHESIS; D. CRYSTAL STRUCTURE; DIFFERENT SUBSTRATES; DISLOCATION DENSITIES; GRAIN ORIENTATION; GRAIN SIZE; HEXAGONAL LATTICE; HIGH QUALITY; HIGH-TEMPERATURE DEPOSITION; MICRO-STRAIN; NANOCRYSTALLINES; PER UNIT; PREPARATION PROCESS; SEMICONDUCTOR THIN FILMS; SINGLE PHASE; STRUCTURAL EVOLUTION; STRUCTURAL PARAMETER; SYSTEMATIC STUDY; THICKNESS OF THE FILM; THIN LAYERS; TITANIUM SUBSTRATES; X-RAY DIFFRACTION DATA; ZINC SELENIDE; ZNSE FILMS;

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); GRAIN SIZE AND SHAPE; SEMICONDUCTOR GROWTH; STAINLESS STEEL; SUBSTRATES; SYNTHESIS (CHEMICAL); THIN FILMS; TITANIUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC;

FILM PREPARATION;

EID: 77950594508     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.03.019     Document Type: Article

References (46)

1. Lakshmikumar S.T., and Rastogi A.C. Thin Solid Films 259 (1995) 150
2. Lokhande C.D., Patil P.S., Tributsch H., and Ennaoui A. Sol. Energy Mater. Sol. Cells 55 (1998) 379
3. Jeon H., Ding J., Palterson W., Nurnikko A.V., Xie W., BGrillo D.C., Kobayashi M., and Gunshor R.L. Appl. Phys. Lett. 59 (1991) 3619
4. Haase M.A., Qie J., Depuydt J.M., and Cheng H. Appl. Phys. Lett. 59 (1991) 1272
5. Akira O., Noriyoshi S., and Zembutsu S. J. Appl. Phys. 64 (1988) 654
6. Akber H.S., Abdulkadier A.J., and Bani M.S. J. Sol. Energy Res. 6 (1988) 49
7. Falcony C., Sinencio S., and Helmen J.S. J. Appl. Phys. 56 1984 (1752)
8. Ennaoui A., Siebntritt S., Lux-Steiner M.C., Riedl W., and Karg F. Sol. Energy Mater. Sol. Cells 67 (2001) 31
9. Alfano R.R., Wang O.Z., Jumbo J., and Bhargava B. J. Phys. Rev. A 35 (1987) 459
10. Ennaoui A., Siebentritt S., Lux-Steiner M.Ch., Ridel W., and Karg F. Sol. Energy Mater. Sol. Cells 67 (2001) 172
11. Rumberg A., Sommerhalter C., Toplak M., Jager-Waldau A., and Lux-Steiner M.C. Thin Solid Films 361 (2001) 172
12. Chaparro A.M., Matinez M.A., Guillen C., Bayon R., Gutierrez M.T., and Herero J. Thin Solid Films 361 (2000) 177
13. Rumberg A., Sommerhalter Ch., Toplak M., Jager-Waldau A., and Lux- Steiner M.Ch. Thin Solid Films 361/362 (2000) 172
14. Vanzetti L., Bonanni A., Bratina G., Sorba L., Franciosi A., Lomascolo M., Greco D., and Cingolani R. J. Cryst. Growth 150 (1995) 765
15. Ziqiang Z., Kazuhisa T., Takafumi Y., and Yasumasa O. J. Cryst. Growth 150 (1995) 797-802
16. Wang C., Qian X.F., Zhang W.X., Zhang X.M., Xie Y., and Qian Y.T. Mater. Res. Bull. 34 (1999) 1637
17. Harris Liao M.C., Chang Y.H., Chen Y.F., Hsu J.W., Lin J.M., and Chou W.C. Appl. Phys. Lett. 70 17 (1997) 28
18. Rizzo A., Tagliente M.A., Caneve L., and Scaglione S. Thin Solid Films 368 (2000) 8
19. Lee C.D., Kim B.K., Kim J.W., Park H.L., Chung C.H., Chang S.K., Lee J.I., and Noh S.K. J. Cryst. Growth 138 (1994) 136
20. Guziewicz E., Godlewski M., Kopalko K., Lusakowska E., Dynowska E., Guziewicz M., Godlewski M.M., and Phillips M. Thin Solid Films 446 (2004) 172
21. Pramanik P., and Biswas S. J. Electrochem. Soc. (1986) 350
22. Estrada C.A., Nair P.K., Nair M.T.S., Zingaro R.A., and Meyers A. J. Electochem. Soc. 141 3 (1994) 802
23. Wang C., Zhang W.X., Qian X.F., Zhang X.M., Xie Y., and Qian Y.T. Mater. Chem. Phys. 60 (1999) 99
24. Kosanovic T., Bouroushian M., and Soyrellis N. Mater. Chem. Phys. 90 (2005) 148
25. Bradley F.M. J. Br. Inst. ct. Eng. 20 (1960) 765
26. Proebster W. Proc. Int. Solid Circuits Conf., AIEE (1962) p28
27. Remigiusz Kowalik P.Z., and Fitzner K. Electrochim. Acta 53 (2008) 6184
28. Bouroushian M., Losanovic T., and Spyrellis N. J. Solid State Electrochem. 9 (2005) 55
29. Bouroushian M., Losanovic T., and Spyrellis N. J. Appl. Electrochem. 36 (2006) 821
30. Kosanovic T., Bouroushian M., and Spyrellis N. Mater. Chem. Phys. 90 (2005) 148
31. Kathalingam A., Mahalingam T., and Sanjeeviraja C. Mater. Chem. Phys. 106 (2007) 215
32. Riveros G., Gómez H., Henríquez R., Schrebler R., Marotti R.E., and Dalchiele E.A. Sol. Energy Mater. Sol. Cells 70 (2001) 255
33. Loizos Z., Spyrellis N., Maurin G., and Pottier D. J. Electoanal. Chem. 269 (1989) 399
34. Panicker P., Kröger F.A., and Castner M. J. Electochem. Soc. 125 (1978) 566
35. Kröger F.A. J. Electochem. Soc. 125 (1978) 2028
36. Kowalik R., Zabiński P., and Fitzner K. Electrochim. Acta 53 (2008) 6184
37. Lincot D., Furlong M.J., Froment M., Corles R., and Brenard M.C. Mater. Sci. Res. Soc. Symp. Proc. 415 (1997) 223
38. Cullity B.D. Elements of X-ray Diffraction (1956), Addition-Wesley, Massachusetts
39. Velumani S., Narayanadhas Sa.Ka., and Mangalraj D. Semicon. Sci. Technol. 13 (1998) 1016
40. Dhanam M., Balasundar Prabhu R., Jayakumar S., Gopalakrishnan P., and Kannan M.D. Phys. Status Solidi (a) 19 (2002) 149
41. Bouroushian M., Kosanovic T., Loizos Z., and Spyrellis N. J. Solid State Electron. 6 (2002) 272
42. M. Bouroushian, T. Kosanovic, ibid, 10 (2006) 223.
43. Natarajan C., Sharon M., Lévy-Clément C., and Neumann-Spallart M. Thin Solid Films 237 (1994) 118
44. Korotcenkov G., Cerneavschi A., Brinzari V., Vasiliev A., Ivanov M., Cornet A., Morante J., Cabot A., and Arbiol J. Sensors Actuators B 99 (2004) 297
45. Nanoscope I.I.I. command Reference Manual, Version 3.0, Digital Instruments, Inc.(1993).
46. Brune D., Hellborg R., and Whitlow H.J. In: Hunderi O. (Ed). Surface Characterization-A User's Source Book (1997), Wiley-VCH, Weinheim, Germany