Electrical properties of ITO films prepared by tin ion implantation in In2O3 film

Thin Solid Films

Volumn 317, Issue 1-2, 1998, Pages 157-160

  Sawada, Masato ^a   Higuchi, Masatoshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Annealing; Carrier concentration; Crystallinity; Hall mobility; Indium oxide; Ion implantation; Resistivity; Sputtering; Thin films

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY MEASUREMENT; HALL EFFECT; ION IMPLANTATION; MAGNETRON SPUTTERING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINITY; HALL MOBILITY; INDIUM TIN OXIDE FILM;

THIN FILMS;

EID: 0032048370     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00513-0     Document Type: Article

References (10)

1. K. Suzuki, SID Int. Symposium Digest Tech. Papers 25 (1994) 167.
2. T.J. Scheffer, J. Nehring, SID Seminar Lecture Notes, Vol. I, (1994), M-1/13.
3. H. Kimura, H. Watanabe, S. Ishihara, Y. Suzuki, T. Ito, J. Vac. Soc. Japan 30 (6) (1987) 546, in Japanese.
4. S. Ray, R. Banerjee, N. Basu, A.K. Batabyal, A.K. Barua, J. Appl. Phys. 54 (1983) 3497.
5. D.B. Fraser, H.D. Cook, J. Electrochem. Soc. 119 (1972) 1368.
6. H. Kostlin, R. Jost, W. Lems, Phys. Status Solidi A 29 (1975) 87.
7. M. Mizuhashi, Thin Solid Films 70 (1980) 91.
8. N. Mori, J. Appl. Phys. 73 (1993) 1327.
9. M. Higuchi, M. Sawada, Y. Kuronuma, J. Electrochem. Soc. 140 (1993) 1773.
10. M. Higuchi, S. Uekusa, R. Nakano, K. Yokogawa, Jpn. J. Appl. Phys. 33 (1994) 302.