Synthesis and properties of pure and antimony-doped tin dioxide thin films fabricated by sol-gel technique on silicon wafer

Materials Chemistry and Physics

Volumn 114, Issue 2-3, 2009, Pages 854-859

  Kong, Jing ^a   Deng, Hongmei ^b   Yang, Pingxiong ^a   Chu, Junhao ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b Shanghai University   (China)

Author keywords

Sb doped SnO2; Sol gel; Spectroscopic ellipsometry; Thin films

Indexed keywords

ANTIMONY; COLLOIDS; DOPING (ADDITIVES); ELLIPSOMETRY; FILM PREPARATION; GELATION; GELS; OPTICAL CONSTANTS; OPTICAL MICROSCOPY; OPTICAL MULTILAYERS; OPTICAL PROPERTIES; OXIDE MINERALS; PHOTOELECTRON SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOL-GEL PROCESS; SOL-GELS; SOLIDS; SOLS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; TIN; TIN DIOXIDE; TITANIUM COMPOUNDS; TITANIUM OXIDES; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURES; AVERAGE GRAIN SIZES; CONCENTRATION OF; DIELECTRIC FUNCTIONS; DOMINANT ORIENTATIONS; HIGH QUALITIES; PEAK POSITIONS; REFRACTION INDICES; RUTILE STRUCTURES; SB-DOPED SNO2; SCANNING ELECTRONS; SI (1 1 1); SOL-GEL; SOL-GEL TECHNIQUES; TIN DIOXIDE THIN FILMS; VISIBLE SPECTRAL REGIONS; X- RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES; XRD PATTERNS;

OPTICAL FILMS;

EID: 58849116276     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.10.049     Document Type: Article

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