Peculiarities of the photon-assisted field emissions from GaN nanorods

Journal of Vacuum Science and Technology B

Volumn 28, Issue 2, 2010, Pages

  Evtukh, A ^a   Yilmazoglu, O ^b   Litovchenko, V ^a   Semenenko, M ^a   Kyriienko, O ^a   Hartnagel, H L ^b   Pavlidis, D ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; FIELD EMISSION; III-V SEMICONDUCTORS; NANORODS; PHOTONS; SILICON WAFERS;

ACTIVE LAYER; ELECTRON EXCITATIONS; ELECTRON FIELD; FIELD EMITTER; FOWLER-NORDHEIM PLOTS; GAN NANORODS; HIGH-VOLTAGES; LOW VOLTAGES; NANO-METER-SCALE; SI SUBSTRATES;

GALLIUM NITRIDE;

EID: 77950567047     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3368463     Document Type: Conference Paper

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