Improvement of interfacial adhesion in vertical GaN-based LEDs by introducing O 2 plasma cleaning and intermediate layers

Applied Surface Science

Volumn 256, Issue 13, 2010, Pages 4157-4161

  Kim, Sunjung ^a  

^a University of Ulsan   (South Korea)

Author keywords

Adhesion layer; Interfacial adhesion; Leakage current characteristics; Light emitting diode (LED); Plasma cleaning

Indexed keywords

ADHESION; CLEANING; DAMAGE DETECTION; ELECTRODES; GALLIUM NITRIDE; GOLD; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; INTERFACES (MATERIALS); NICKEL; PASSIVATION; PHOTORESISTS; TIN OXIDES;

ADHESION LAYER; CURRENT CHARACTERISTIC; INTERFACIAL ADHESIONS; LIGHT EMITTING DIODE (LED); PLASMA CLEANING;

LIGHT EMITTING DIODES;

EID: 77950518235     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.01.117     Document Type: Article

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