SCOPUS 정보 검색 플랫폼

Volumn 12, Issue 12, 2009, Pages

Effect of interfacial properties of p-GaN/sputter-deposited NiAg-based electrode on optical properties of vertical GaN-based LEDs

(1) Kim, Sunjung a

a University of Ulsan (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION STRENGTHS; GAN BASED LED; IN-DIFFUSION; INTERFACIAL ADHESION STRENGTH; INTERFACIAL ADHESIONS; INTERFACIAL PROPERTY; NI ATOMS; OUTPUT POWER; VERTICAL GAN-BASED LIGHT EMITTING DIODES;

ADHESION; BOND STRENGTH (MATERIALS); GALLIUM ALLOYS; GALLIUM NITRIDE; INORGANIC COATINGS; LIGHT EMITTING DIODES; NICKEL; OHMIC CONTACTS; ORGANIC LIGHT EMITTING DIODES (OLED); REFLECTION; SEMICONDUCTING GALLIUM;

OPTICAL PROPERTIES;

EID: 70350047077 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3238468 Document Type: Article

Times cited : (6)

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