Leakage current characteristic of vertical GaN-based light emitting diodes with passivation structures

Electrochemical and Solid-State Letters

Volumn 10, Issue 11, 2007, Pages 334-336

  Kim, Sunjung ^a,b   Bae, Duk Kyu ^a   Choi, Jeong Hyeon ^a   Jang, Jun Ho ^a   Lee, Jeong Soo ^a  

^a LG Electronics Inc   (South Korea)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; LEAKAGE CURRENTS; PASSIVATION; PHOTORESISTS; RESIDUAL STRESSES;

DEVICE FABRICATION; OPERATION VOLTAGE; REVERSE BIAS;

LIGHT EMITTING DIODES;

EID: 34548486661     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2776904     Document Type: Article

References (7)

1. X. Guo, Y.-L. Li, and E. F. Schubert, Appl. Phys. Lett., 79, 1936 (2001).
2. S. R. Jeon, Y. H. Song, H. J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, Appl. Phys. Lett., 78, 3265 (2001).
3. J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J. H. Lim, and S. J. Park, Appl. Phys. Lett., 88, 043507 (2006).
4. J.-O. Song, W. K. Hong, Y. Park, J. S. Kwak, and T.-Y. Seong, Appl. Phys. Lett., 86, 133503 (2005).
5. R.-H. Horng, Y.-K. Wang, S.-Y. Huang, and D. S. Wuu, IEEE Photon. Technol. Lett., 18, 457 (2006).
6. W. S. Wong, T. Sands, and N. W. Cheung, Appl. Phys. Lett., 72, 599 (1998).
7. D. S. Li, H. Chen, H. B. Yu, H. Q. Jia, Q. Huang, and J. M. Zhou, J. Appl. Phys., 96, 1111 (2004).