Molecular dynamical simulations on a-C:H film growth from atomic flux of C and H: Effect of H fraction

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 374, Issue 21, 2010, Pages 2150-2155

  Quan, W L ^a,b,c   Li, H X ^a   Zhao, F ^a,b   Ji, L ^a,b   Du, W ^a,b   Zhou, H D ^a   Chen, J M ^a  

^a LANZHOU INSTITUTE OF CHEMICAL PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c LANZHOU JIAOTONG UNIVERSITY   (China)

Author keywords

Deposition mechanism; H fraction; Hydrogenated carbon film; Molecular dynamical simulation

Indexed keywords

AMORPHOUS CARBON; ATOMS; CARBON FILMS; GROWTH RATE; HYDROGENATION;

DEPOSITION MECHANISM; DYNAMICAL SIMULATION; FILM FORMATIONS; FILM GROWTH MECHANISM; H FRACTION; HYDROGENATED AMORPHOUS CARBON (A-C:H); HYDROGENATED CARBON FILMS; INCIDENT ENERGY;

FILM GROWTH;

EID: 77950516103     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2010.01.059     Document Type: Article

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