Influence of Ni catalyst layer and TiN diffusion barrier on carbon nanotube growth rate

Nanoscale Research Letters

Volumn 5, Issue 3, 2010, Pages 539-544

  Kpetsu, Jean Baptiste A ^a   Jedrzejowski, Pawel ^a   Côté, Claude ^a   Sarkissian, Andranik ^a   Mérel, Philippe ^b   Laou, Philips ^b   Paradis, Suzanne ^b   Désilets, Sylvain ^b   Liu, Hao ^c   Sun, Xueliang ^c  

^a Plasmionique Inc   (Canada)

^b DEFENCE RESEARCH AND DEVELOPMENT CANADA VALCARTIER   (Canada)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

Carbon nanotubes; Ni catalyst; Plasma enhanced chemical vapor deposition; Scanning electron microscopy; TiN diffusion barrier

Indexed keywords

AFM; BARRIER LAYERS; CARBON NANOTUBE GROWTH; DECREASING FUNCTIONS; GROWTH MODES; INFRARED SENSING; MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; MULTI-WALL CARBON NANOTUBES; NI CATALYSTS; PROCESS TEMPERATURE; SEM; SENSOR CHARACTERISTICS; TEM; TIN ELECTRODES; TIP GROWTH; VERTICALLY ALIGNED;

CATALYSTS; CHEMICAL VAPOR DEPOSITION; DIFFUSION BARRIERS; MICROWAVES; MULTIWALLED CARBON NANOTUBES (MWCN); PLASMA DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SYNTHESIS (CHEMICAL); TITANIUM NITRIDE;

CARBON NANOTUBES;

EID: 77950516087     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9544-y     Document Type: Article

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