STEM EDX applications for arsenic dopant mapping in nanometer scale silicon devices

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Servanton, G ^a   Pantel, R ^a   Juhel, M ^a   Bertin, F ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAPPING; RADIATION DAMAGE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT DISTRIBUTION; ENERGY DISPERSIVE X-RAY; NANO METER RANGE; NANO-METER SCALE; NMOS TRANSISTORS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SENSITIVITY LIMIT; SILICON DEVICES;

DOPING (ADDITIVES);

EID: 77950463322     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012044     Document Type: Conference Paper

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