Temperature and growth rate fluctuations in silicon floating zones

Advances in Space Research

Volumn 29, Issue 4, 2002, Pages 527-536

  Croll A ^a   Schweizer, M ^b   Dold, P ^c   Kaiser, Th ^c   Benz, K W ^c   Lichtensteiger, M ^c  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b NASA MARSHALL SPACE FLIGHT CENTER   (United States)

^c UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; HEAT CONVECTION; MAGNETIC FIELD EFFECTS; MICROGRAVITY PROCESSING; MICROSCOPIC EXAMINATION; RADIANT HEATING; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

SILICON FLOATING ZONES; SMALL SCALE SYSTEMS;

SEMICONDUCTING SILICON;

CRYSTAL STRUCTURE;

EID: 0036472450     PISSN: 02731177     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0273-1177(01)00661-5     Document Type: Article

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