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Volumn 96, Issue 10, 2010, Pages

Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P 0.06/(100) GaAs thin films

(4) Cubukcu, M a Von Bardeleben, H J a Cantin, J L a Lematre A b

a INSTITUT DES NANOSCIENCES DE PARIS (France)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS THIN FILMS; IN-PLANE; MAGNETIZATION TRANSITION; MN-DOPING; OUT-OF-PLANE; TEMPERATURE DEPENDENCE; TEMPERATURE RISE; TEMPERATURE-INDUCED; UNIAXIAL ANISOTROPY CONSTANT;

FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; GALLIUM ARSENIDE; MANGANESE COMPOUNDS; PHOSPHORUS; SEMICONDUCTING GALLIUM; THIN FILMS;

MANGANESE;

EID: 77949705526 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3353997 Document Type: Article

Times cited : (9)

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