Simulation study on field-plated buried gate-buried channel SiC MESFETs

2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

Volumn , Issue , 2009, Pages 487-490

  Zhang, Rui ^a   Lu, Hongliang ^b   Zhang, Yimen ^b   Zhang, Yuming ^b  

^a XIDIAN UNIVERSITY   (China)

^b NONE

Author keywords

AC small signal; Breakdown; Buried gate buried channel; DC; Field plated; MESFET

Indexed keywords

AC PERFORMANCE; BREAKDOWN VOLTAGE; BURIED CHANNELS; BURIED GATES; DC FIELD; MESFETS; PEAK ELECTRIC FIELD; PLATED STRUCTURES; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SIMULATION STUDIES; SMALL SIGNAL; SURFACE TRAPPING;

ELECTRIC FIELDS; HETEROJUNCTION BIPOLAR TRANSISTORS; MESFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SOLID STATE DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 77949599509     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2009.5394208     Document Type: Conference Paper

References (7)

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7. Hongliang Lv, Yimen Zhang, Yuming Zhang, ''Drain Avalanche Breakdown and Gae Instabilities in 4H-SiC MESFET's" IEEE 03CH37400. 41st Annual International Reliability Physics Symposium, Dallas, Texas, 2003.