Bandgaps and band bowing in semiconductor alloys

Solid State Communications

Volumn 150, Issue 17-18, 2010, Pages 888-892

  Sandu, Titus ^a,b   Iftimie, Radu I ^b  

^a International Centre of Biodynamics Bucharest   (Romania)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

A. Disordered systems; A. Semiconductors; D. Dielectric response; D. Electronic band structure

Indexed keywords

ATOMIC SPHERE APPROXIMATION; BAND GAPS; BOWING PARAMETERS; DIELECTRIC CONSTANTS; DIELECTRIC RESPONSE; DIELECTRIC SCALING; DISORDERED SYSTEM; ELECTRONIC BAND STRUCTURE; ENERGY SHIFT; GREEN FUNCTION; HIGH-FREQUENCY DIELECTRICS; LINEAR MUFFIN-TIN ORBITALS; SALIENT FEATURES; SEMI-CONDUCTOR ALLOYS; TIGHT BINDING;

ALLOYS; DENSITY FUNCTIONAL THEORY; ELECTRON TRANSITIONS; ENERGY GAP; LOCAL DENSITY APPROXIMATION; PERMITTIVITY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR QUANTUM DOTS; TIN; TITANIUM COMPOUNDS; ZINC;

CERIUM ALLOYS;

EID: 77949487039     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.01.046     Document Type: Article

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