Time-resolved photoluminescence of isoelectronic traps in ZnSe 1-x Tex semiconductor alloys

Applied Physics Letters

Volumn 93, Issue 24, 2008, Pages

  Lin, Y C ^a   Chou, W C ^a   Fan, W C ^a   Ku, J T ^a   Ke, F K ^a   Wang, W J ^a   Yang, S L ^a   Chen, W K ^a   Chang, W H ^a   Chia, C H ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM ALLOYS; DECAY (ORGANIC); ENERGY TRANSFER; LIGHT EMISSION; LUMINESCENCE; METALLIC COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BAND EDGE STATES; CONCENTRATION INCREASES; DECAY RATES; ENERGY TRANSFER MODELS; ISOELECTRONIC TRAPS; LIFE-TIMES; LOCALIZED STATES; MONOTONICALLY; SEMICONDUCTOR ALLOYS; STRETCHED EXPONENTIAL LAWS; TIME-RESOLVED;

SEMICONDUCTING TELLURIUM;

EID: 57849090917     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3054162     Document Type: Article

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