Fabrication of GaN nanowires on Pd-coated sapphire substrates by magnetron sputtering technique

Materials Characterization

Volumn 61, Issue 4, 2010, Pages 381-385

  Guo, Y F ^a   Xue, C S ^a   Liu, W J ^a   Sun, H B ^a   Cao, Y P ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Nanowires; Photoluminescence; Semiconductor; Sputtering

Indexed keywords

GAN NANOWIRES; GROWTH MECHANISMS; HEXAGONAL WURTZITE STRUCTURE; PD FILM; POLYCRYSTALLINE; RAMAN SPECTRUM; SAPPHIRE SUBSTRATES; SEMICONDUCTOR;

CRYSTAL STRUCTURE; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; OPTICAL PROPERTIES; PALLADIUM; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; X RAY DIFFRACTION; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 77949485565     PISSN: 10445803     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchar.2010.01.001     Document Type: Article

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