Implantation angle dependence of ion irradiation damage in GaN

Materials Science and Engineering: B

Volumn 105, Issue 1-3, 2003, Pages 111-113

  Nord, J ^a   Nordlund, K ^a   Pipeleers, B ^b   Vantomme, A ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b KU LEUVEN   (Belgium)

Author keywords

Defects; GaN; Irradiation; Simulation

Indexed keywords

COMPUTER SIMULATION; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR DYNAMICS;

ION IRRADIATION DAMAGE; SURFACE DAMAGE;

THIN FILMS;

EID: 0344444345     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.08.026     Document Type: Conference Paper

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