The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature

Journal of Optoelectronics and Advanced Materials

Volumn 12, Issue 2, 2010, Pages 262-266

  Uslu, H ^a   Safak Y ^a   Tascioglu I ^a   Altindal, S ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

AC conductivity; Al TiW Pd2Si n Si structures; Dielectric properties; Electrical characteristics; I V and C V measurement; Illumination effect

Indexed keywords

ALUMINUM METALLOGRAPHY; BIAS VOLTAGE; CAPACITANCE; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; INTERFACE STATES; SILICON;

AC CONDUCTIVITY; AC ELECTRICAL CONDUCTIVITY; ADMITTANCE SPECTROSCOPIES; C-V MEASUREMENT; ELECTRICAL AND DIELECTRIC PROPERTIES; ELECTRICAL CHARACTERISTIC; ILLUMINATION EFFECT; INTERFACIAL POLARIZATION;

SILICON COMPOUNDS;

EID: 77949442822     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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