Chemical reactions during wet-etching process of LSMO/PZT/LSMO-structured device fabrication

Ferroelectrics

Volumn 380, Issue 1 PART 1, 2009, Pages 97-101

  Yeh, Tsung Her ^a   Suresh, M B ^a   Shen, Jun Nan ^a   Yu, Jyh Cheng ^b   Chou, Chen Chia ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

Chemical reaction; Ferroelectric thin film; PZT; Wet etching

Indexed keywords

DEVICE FABRICATIONS; DEVICE FAILURES; ETCHING MASKS; ETCHING MECHANISM; ETCHING RATE; ETCHING SOLUTIONS; ETCHING TIME; LANTHANUM STRONTIUM MANGANATES; MASK PATTERNS; PZT; PZT FILM; REPLACEMENT REACTIONS; SENSING DEVICES; WELL CONTROL; WET-ETCHING PROCESS;

FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; GRAFTING (CHEMICAL); MASKS; NEWTONIAN FLOW; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; SENSORS; STRONTIUM; SUBSTITUTION REACTIONS; SYNTHESIS (CHEMICAL); THIN FILM DEVICES; TITANIUM OXIDES;

WET ETCHING;

EID: 77749315016     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190902873295     Document Type: Conference Paper

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