Basic electronic properties and optimization of TCO/a-Si:H(n)/c-Si(p) hetero solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 1225-1228

  Maydell, K V ^a   Schmidt, M ^a   Korte, L ^a   Laades, A ^a   Conrad, E ^a   Stangl, R ^a   Scherff, M ^b   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURE; GAP STATE DENSITY; GAS PHASE DOPING CONCENTRATION;

HETEROJUNCTIONS; HYDROGEN; INTERFACES (MATERIALS); OPTIMIZATION; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; SILICON;

SOLAR CELLS;

EID: 27944443280     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa, Y. Kuwano, "Development of New a-Si/c-Si Heterojunction Solar Cells", Jpn. J. Appl. Phys 31, 1993, p. 3518.
2. M. Schmidt, A. Schoepke, L. Korte, O. Milch, W. Fuhs, "The gap state density distribution in extremely thin a-Si:H layers on crystalline silicon wafers ", J. Non-Cryst. Solids 338-340, 2004, p. 211.
3. Y. W. Lam, "Surface-state density and surface potential in MIS capacitors by surface photovoltage measurements", J. Phys. D: Appl. Phy.s 4, 1971, p1370.
4. K. Winer and L. Ley, "Surface states and exponential valence band tail in a-Si:H", Phys. Rev. B 36, 1987, p. 6072.
5. th EPVSEC, Munich, 2001, p. 1387.
6. W. E. Spear and P. G. LeComber, "Substitutional doping of amorphous silicon", Solid State Commun. 17, 1975, p. 1193.