Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 2953-2956

  Asahara, Hirokazu ^a,b   Takamizu, Daiju ^b   Inokuchi, Atsutoshi ^a,c   Hirayama, Masaki ^a   Teramoto, Akinobu ^a   Saito, Shin ^a   Takahashi, Migaku ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b ROHM CO LTD   (Japan)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

Gallium doped zinc oxide; Magnesium zinc oxide; Modulation of band gap; Plasma enhanced metal organic chemical vapor deposition; Substitution

Indexed keywords

BAND GAPS; GALLIUM DOPED ZINC OXIDE; GALLIUM DOPED ZINC OXIDES; METALORGANIC CHEMICAL VAPOR DEPOSITION;

ELECTRIC PROPERTIES; ENERGY GAP; GALLIUM; GALLIUM ALLOYS; INDUSTRIAL CHEMICALS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; OPTICAL PROPERTIES; ORGANIC CHEMICALS; OXYGEN; PLASMA DEPOSITION; PLASMAS; SAPPHIRE; SUBSTRATES; VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 77649169630     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.195     Document Type: Article

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