Top-gate-type ambipolar organic field-effect transistors with indium-tin oxide drain/source electrodes using polyfluorene derivatives

Organic Electronics

Volumn 11, Issue 4, 2010, Pages 509-513

  Kajii, Hirotake ^a   Koiwai, Kyohei ^a   Hirose, Youhei ^a   Ohmori, Yutaka ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Ambipolar organic field effect transistor; Light emitting device; Polyfluorene; Top gate

Indexed keywords

CURRENT DENSITY; ELECTRODES; INDIUM COMPOUNDS; LIGHT EMISSION; MOLECULAR ORBITALS; PHOTOLITHOGRAPHY; TIN OXIDES;

AMBIPOLAR; AMBIPOLAR CHARACTERISTICS; HIGHEST OCCUPIED MOLECULAR ORBITAL; LIGHT EMITTING DEVICES; LOWEST UNOCCUPIED MOLECULAR ORBITAL; POLY(9 ,9-DIOCTYLFLUORENE) (F8); POLYFLUORENES; TOP GATE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77549083301     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.12.004     Document Type: Article

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