Relationship between radiation damage anisotropy in MgO and YSZ single crystals and the Ion/Atom ratio deposition parameter in biaxially-textured MgO and YSZ thin films fabricated by ion beam assisted deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 6, 2010, Pages 622-626

  Usov, I O ^a   Arendt, P N ^a   Sickafus, K E ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Ion beam assisted deposition; Irradiation damage; Magnesia; Yttria stabilized zirconia

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; DAMAGE ACCUMULATION; DAMAGE ANISOTROPY; DAMAGE EVOLUTION; DEPOSITION PARAMETERS; FLUENCE RANGE; ION CHANNELING; ION FLUENCES; ION IRRADIATION; IRRADIATION DAMAGE; RADIATION DAMAGE RESISTANT; RUTHERFORD BACK-SCATTERING SPECTROMETRY; YSZ FILMS; YSZ THIN FILMS;

ANISOTROPY; BEAM PLASMA INTERACTIONS; CRYSTALLOGRAPHY; DEPOSITION; ION BEAMS; ION BOMBARDMENT; IONS; MAGNESIA; RADIATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; YTTRIA STABILIZED ZIRCONIA; YTTRIUM ALLOYS; ZIRCONIA;

ION BEAM ASSISTED DEPOSITION;

EID: 77449086506     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.12.018     Document Type: Article

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