Confined VLS growth and structural characterization of silicon nanoribbons

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1522-1526

  Lecestre, A ^a,b   Dubois, E ^a   Villaret, A ^b   Skotnicki, T ^b   Coronel, P ^c   Patriarche, G ^d   Maurice, C ^e  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

^c CEA GRENOBLE   (France)

^d CNRS   (France)

^e Ecole Nationale Superieure des Mines   (France)

Author keywords

Three dimensional integration; Vapor liquid solid (VLS) growth

Indexed keywords

A-PLANE; AMORPHOUS OXIDE LAYERS; AMORPHOUS SUBSTRATE; CAVITY WALL; CMOS INTEGRATION; CRYSTALLINITIES; ELECTRON BACK-SCATTERED DIFFRACTION; GROWTH CONDITIONS; NANORIBBONS; RANDOM ORIENTATIONS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEM; SI NANOWIRE; SILICON LAYER; SINGLE CRYSTALLINE SILICON; SPATIAL CONFINEMENT; STRUCTURAL CHARACTERIZATION; THREE DIMENSIONAL INTEGRATION; VAPOR-LIQUID-SOLID GROWTH; VLS GROWTH;

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; ELECTRONS; FILM GROWTH; LIQUIDS; METAL CASTINGS; SCANNING ELECTRON MICROSCOPY; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

AMORPHOUS SILICON;

EID: 77049104043     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.053     Document Type: Article

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