SCOPUS 정보 검색 플랫폼

Volumn 107, Issue 3, 2010, Pages

Controllable spin-polarized electrical transport in wide-band-gap oxide ferromagnetic semiconductors

(12) Tian, Y F a,b Yan, Shi Shen a Zhao, M W a Dai, Y Y a Zhang, Y P a Qiao, R M a Hu, S J a Chen, Y X a Liu, G L a Mei, L M a Qiang, Y b Jiao, J c

a SHANDONG UNIVERSITY (China)

b UNIVERSITY OF IDAHO (United States)

c PORTLAND STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMON FEATURES; CONCENTRATION OF; COULOMB SCREENING; ELECTRICAL TRANSPORT; FERROMAGNETIC SEMICONDUCTOR; FOUR-ORDER; HOPPING DISTANCES; LOCALIZATION LENGTH; MOTT VARIABLE-RANGE HOPPING; SPIN INJECTION; SPIN-POLARIZED; SPINTRONICS DEVICE; TERNARY OXIDES; WIDE BAND GAP; WIDE-GAP OXIDES;

FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; OXYGEN; OXYGEN VACANCIES; SPIN DYNAMICS; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

OXIDE FILMS;

EID: 76949108231 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3305457 Document Type: Article

Times cited : (11)

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