Arrays of Si cones prepared by ion beams: Growth mechanisms

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 2, 2010, Pages 309-315

  Shang, N G ^a   Ma, X L ^a   Liu, C P ^a   Bello, I ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED ORIENTATION; CRYSTALLOGRAPHIC ORIENTATIONS; EXPERIMENTAL EVIDENCE; GROWTH MECHANISMS; ION BEAM TECHNIQUE; ION IMPINGING; METAL CLUSTER; SI SUBSTRATES; SINGLE-CRYSTALLINE; TEM; WELL-ALIGNED;

ION BEAMS; IONS; MOLYBDENUM; SILICON; SUBSTRATES;

ION BOMBARDMENT;

EID: 76949108086     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925352     Document Type: Article

References (20)

1. O. Auciello, J. Vac. Sci. Technol. 19, 841 (1981).
2. G. Carter and V. Vishnyakov, Phys. Rev. B 54, 17647 (1996).
3. C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, J. Appl. Phys. 47, 5248 (1976).
4. V. Gowrishankar, S. R. Scully, A. T. Chan, M. D. McGehee, Q. Wang, and H. M. Branz, J. Appl. Phys. 103, 064511 (2008).
5. Y. Chen, L. P. Guo, and D. T. Shaw, J. Cryst. Growth 210, 527 (2000).
6. D. H. Lowndes, J. D. Fowlkes, and A. J. Pedraza, Appl. Surf. Sci. 154/155, 647 (2000).
7. Y. Fujimoto, M. Nozu, and F. Okuyama, J. Appl. Phys. 77, 2725 (1995).
8. Y. Mori, Y. Fujimoto, and F. Okuyama, J. Vac. Sci. Technol., A 10, 3584 (1992).
9. R. S. Robinson and S. M. Rossnagel, J. Vac. Sci. Technol. 21, 790 (1982).
10. G. K. Wehner, Appl. Phys. Lett. 43, 366 (1983).
11. A. D. G. Stewart and M. W. Thompson, J. Mater. Sci. 4, 56 (1969).
12. I. H. Wilson, Radiat. Eff. 18, 95 (1973).
13. J. A. Floro, S. M. Rossnagel, and R. S. Robinson, J. Vac. Sci. Technol. A 1, 1398 (1983).
14. G. K. Wehner, J. Vac. Sci. Technol. A 3, 1821 (1985).
15. M. L. Tarng and G. K. Wehner, J. Appl. Phys. 43, 2268 (1972).
16. N. G. Shang, F. Y. Feng, F. C. K. Au, Q. Li, C. S. Lee, I. Bello, and S. T. Lee, Adv. Mater. 14, 1308 (2002).
17. X. L. Ma, N. G. Shang, Q. Li, C. S. Lee, I. Bello, and S. T. Lee, J. Cryst. Growth 234, 654 (2002).
18. S. Morishita and F. Okuyama, J. Vac. Sci. Technol. A 9, 331 (1991).
19. Hoshi. Yoichi, Suzuki. Atsushi, and Judy. H. Jack, Jpn. J. Appl. Phys. 33, 4991 (1994).
20. R. Kelly and O. Auciello, Surf. Sci. 100, 135 (1980).